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TI SN74CB3Q3251PWR product image
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TI SN74CB3Q3251PWRRoHS

Manufacturer
MPN
SN74CB3Q3251PWR
LCSC Part #
C2869261
Packaging
TSSOP-16-175mil
Customer #
Key Attributes
1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH
Datasheetpdf iconTI SN74CB3Q3251PWR

Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Logic/Signal Switches, Multiplexers, Decoders
ManufacturerTI
PackagingTSSOP-16-175mil
-3dB Bandwidth500MHz
Number of Channels8
Voltage - Supply2.3V~3.6V
Ron
Operating Temperature-40℃~+85℃
FeaturesBidirectional analog channel;Power-off isolation
Con15pF
Propagation Delay5.9ns

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

The SN74CB3Q3251 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3251 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3251 is a 1-of-8 multiplexer/demultiplexer with a single output-enable (OE(overline)) input. The select (S0, S1, S2) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE(overline) is high, the multiplexer/demultiplexer is disabled, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

Features

AI Translation
  • High-Bandwidth Data Path (up to 500 MHz)
  • Equivalent to IDTQS3VH251 Device
  • 5-V Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (r_on = 4 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
  • -d- to 5-V Switching With 3.3-V V_CC
  • -d- to 3.3-V Switching With 3.5 V V_CC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (C_io(OFF) = 3.5 pF Typ)
  • Fast Switching Frequency (f_OE or f_S = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (I_cc = 1 mA Typ)
  • V_CC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • I_off Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Applications

AI Translation
  • PCI Interface
  • Differential Signal Interface
  • Memory Interleaving
  • Bus Isolation
  • Low-Distortion Signal Gating
In-Stock: 3,694
3,694 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 3.2294$ 3.23
10+$ 2.7787$ 27.79
30+$ 2.5096$ 75.29
100+$ 2.2389$ 223.89
500+$ 2.114$ 1057.00
1,000+$ 2.0573$ 2057.30
Standard Packaging2000/Full Reel
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