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TI CSD17381F4RoHS

Manufacturer
TI
MPN
CSD17381F4
LCSC Part #
C2869182
Packaging
PicoStar-3
Customer #
Key Attributes
MOSFET N-CH 30V 3.1A PicoStar-3
Datasheetpdf iconTI CSD17381F4
In-Stock: 2,720
2,720 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.1072$ 0.54
50+$ 0.0873$ 4.37
150+$ 0.077$ 11.55
500+$ 0.0686$ 34.30
3,000+$ 0.0657$ 197.10
6,000+$ 0.0637$ 382.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingPicoStar-3
Drain to Source Voltage30V
Output Capacitance(Coss)57pF
Current - Continuous Drain(Id)3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)2.9pF
RDS(on)250mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)195pF
Gate Charge(Qg)1.04nC@4.5V
TypeN-Channel
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Introduction

AI Translation

90 mΩ, 30V N-channel FemtoFET MOSFET technology is designed and optimized to minimize board space in handheld and mobile applications. This technology reduces package size by at least 60% compared to standard small-signal MOSFETs.

Features

AI Translation
  • Ultra-low on-resistance
  • Ultra-low Qg and Qgd
  • Low threshold voltage
  • Ultra-compact package (0402 case size)
  • Ultra-thin package, 0.36 mm thickness
  • Integrated ESD protection diode, rated >4 kV HBM
  • Integrated ESD protection diode, rated >2 kV CDM
  • Lead-free and halogen-free
  • RoHS compliant

Applications

AI Translation
  • Optimized for load switch applications
  • Optimized for general-purpose switch applications
  • Single-cell battery applications
  • Handheld and mobile applications