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TI CSD19535KTTRoHS

Manufacturer
MPN
CSD19535KTT
LCSC Part #
C2869105
Packaging
TO-263-3
Customer #
Key Attributes
MOSFET N-CH 100V 200A TO-263-3
Datasheetpdf iconTI CSD19535KTT
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.6504$ 3.65
10+$ 3.173$ 31.73
30+$ 2.8904$ 86.71
100+$ 2.603$ 260.30
500+$ 2.4699$ 1234.95
1,000+$ 2.4114$ 2411.40
Standard Packaging500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingTO-263-3
Drain to Source Voltage100V
Output Capacitance(Coss)1.51nF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)3.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.93nF
Gate Charge(Qg)98nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging500
Sales UnitPiece

Introduction

AI Translation

This 100V, 2.8mΩ D2PAK (TO-263) power MOSFET is designed to significantly reduce losses in power conversion applications.

Features

AI Translation
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Lead-free lead finish
  • RoHS compliant
  • Halogen-free
  • D2PAK plastic package

Applications

AI Translation
  • Hot swap
  • Motor control
  • Secondary-side synchronous rectifier