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TI UCC27282DRRoHS

Manufacturer
TI
MPN
UCC27282DR
LCSC Part #
C2867844
Packaging
SOIC-8
Customer #
Key Attributes
3A 120V half-bridge driver with transconductance protection and low switching losses
Datasheetpdf iconTI UCC27282DR
In-Stock: 1,164
1,164 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.1018$ 1.10
10+$ 0.9233$ 9.23
30+$ 0.826$ 24.78
100+$ 0.7156$ 71.56
500+$ 0.6718$ 335.90
1,000+$ 0.6491$ 649.10
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingSOIC-8
Input Logic Level - Low900mV~1.3V
Low Level Delay Time16ns
High Level Delay Time16ns
Quiescent Current300uA
Input Logic Level - High1.9V~2.4V
Operating Temperature-40℃~+140℃
Voltage - Supply5.5V~16V
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)3A
Rise Time12ns
Fall Time10ns
FeaturesUnder Voltage Protection;Enable shutdown;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)3A
Load TypeMOSFET
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

Capable of driving two N-channel MOSFETs in a high-side/low-side configuration. This device enables control of two N-channel MOSFETs in half-bridge or synchronous buck topologies. With 3A peak sink and source currents and low pull-up and pull-down resistances, it drives high-power MOSFETs with minimal switching losses during MOSFET Miller plateau transitions. Since the input is independent of the supply voltage, it is compatible with both analog and digital controllers.

The input pins and HS pin withstand large negative voltages, improving system robustness. Input interlock further enhances robustness and system reliability in high-noise applications. The enable and disable functions provide additional system flexibility by reducing driver power consumption and responding to fault events within the system. The 5V UVLO allows the system to operate at lower bias voltages — a requirement in many high-frequency applications — and can improve system efficiency in certain operating modes. Small propagation delay and delay-matching specifications minimize dead-time requirements, further improving efficiency.

Both the high-side and low-side driver stages feature UVLO, forcing the outputs low when the VDD voltage falls below the specified threshold. In many applications, the integrated bootstrap diode eliminates the need for an external discrete diode, saving board space and reducing system cost. The compact package supports high-density designs.

Features

AI Translation
  • Drives two N-channel MOSFETs in high-side/low-side configuration
  • 5V typical UVLO
  • Input interlock with enable/disable in DRC package
  • 16ns typical propagation delay
  • 12ns rise time and 10ns fall time with 1.8nF load
  • 1ns typical delay matching
  • Absolute maximum negative voltage on input pins (–5V)
  • Absolute maximum negative voltage on HS pin (–14V)
  • ±3A peak output current
  • 120V absolute maximum bootstrap voltage
  • Low quiescent current in disabled state (7μA)
  • Integrated bootstrap diode
  • Junction temperature range rated –40°C to 140°C

Applications

AI Translation
  • Telecom and commercial power supplies
  • Motor drives and power tools
  • Auxiliary inverters
  • Half-bridge and full-bridge converters
  • Active clamp forward converters
  • High-voltage synchronous buck converters
  • Class D audio amplifiers