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TI TLV8544PWRRoHS

Manufacturer
TI
MPN
TLV8544PWR
LCSC Part #
C2867322
Packaging
TSSOP-14
Customer #
Key Attributes
500nA RRIO nano-power operational amplifier
Datasheetpdf iconTI TLV8544PWR
In-Stock: 1,995
1,995 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.4686$ 2.34
50+$ 0.3914$ 19.57
150+$ 0.3583$ 53.75
500+$ 0.2964$ 148.20
2,000+$ 0.2781$ 556.20
4,000+$ 0.267$ 1068.00
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
ManufacturerTI
PackagingTSSOP-14
Number of Channels4
Vos - Input Offset Voltage3.1mV
Slew Rate4.5V/ms
Input Offset Current(Ios)0.1pA
Input offset current drift(Ios TC)-
FeaturesBuilt-in compensation;EMI filtering/RF suppression
Operating Temperature-40℃~+125℃
Common Mode Rejection Ratio(CMRR)80dB
Ib - Input Bias Current0.1pA
Output Current15mA
Maximum Power Supply Range (Vdd-Vss)3.6V
Input Offset Voltage Drift(Vos TC)800nV/℃
Quiescent Current500nA
Gain Bandwidth Product8kHz
Input Voltage Noise Density264nV/√Hz@1kHz
Dual Supply-
Rail to RailRail-to-Rail Input, Rail-to-Rail Output
Single Supply1.7V~3.6V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

The TLV854x ultra-low-power operational amplifiers are suitable for cost-optimized sensing applications in wireless and low-power wired devices. The TLV854x series of operational amplifiers can minimize the power consumption of devices such as motion detection security systems (e.g., microwave and PIR motion sensing systems) that place a high emphasis on battery life. The complementary metal-oxide-semiconductor (CMOS) input stage of such devices is carefully designed to achieve ultra-low femtoampere offset current, thereby reducing IBIAS and IOS errors that would otherwise affect sensitive applications. Examples of such applications include transimpedance amplifier (TIA) configurations with megaohm feedback resistors and high source impedance sensing applications. Additionally, the built-in EMI protection reduces the device's sensitivity to unwanted RF signals emitted by mobile phones, WiFi, radio transmitters, and tag readers.

Features

AI Translation
  • Nanoamp supply current: 500nA/channel
  • Offset voltage: 3.1mV (maximum)
  • TcVos: 0.8μV/°C
  • Gain bandwidth: 8kHz
  • Unity-gain stable
  • Low input bias current: 100fA
  • Wide supply voltage range: 1.7V to 3.6V
  • Rail-to-rail input and output (RRIO)
  • Temperature range: -40°C to +125°C
  • Industry-standard packages: quad 14-pin TSSOP and SOIC, dual 8-pin SOIC, single 5-pin SOT-23, leadless package (dual 8-pin X2QFN)

Applications

AI Translation
  • Motion detector using PIR sensor SNAA301
  • Motion detector using microwave sensor
  • Gas detector
  • Ionization smoke alarm
  • Temperature control device
  • Remote sensor, IoT
  • RFID reader and tag
  • Portable medical device
  • Blood glucose monitoring