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TI CSD17581Q3ATRoHS

Manufacturer
TI
MPN
CSD17581Q3AT
LCSC Part #
C2866708
Packaging
PDFN-8(3x3.2)
Customer #
Key Attributes
MOSFET N-CH 30V 60A PDFN-8(3x3.2)
Datasheetpdf iconTI CSD17581Q3AT
In-Stock: 428
428 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7647$ 0.76
10+$ 0.6562$ 6.56
30+$ 0.58$ 17.40
250+$ 0.5169$ 129.23
500+$ 0.4974$ 248.70
1,000+$ 0.4845$ 484.50
Standard Packaging250/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingPDFN-8(3x3.2)
Drain to Source Voltage30V
Output Capacitance(Coss)445pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)195pF
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.64nF
Gate Charge(Qg)25nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging250
Sales UnitPiece

Introduction

AI Translation

This 30 V, 3.2 mΩ, NexFET power MOSFET in a 3.3 mm x 3.3 mm SON package is designed to significantly reduce losses in power conversion applications.

Features

AI Translation
  • Low Qg and Qgd
  • Low RDS(on)
  • Low thermal impedance
  • Avalanche rated
  • Lead-free
  • RoHS compliant
  • Halogen-free
  • Small outline no-lead (SON) 3.3 mm x 3.3 mm plastic package

Applications

AI Translation
  • Point-of-load synchronous buck converter for networking, telecommunications, and computing systems
  • Motor control applications
  • Optimized for gate-drive FET applications