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TI SN74ABT16543DGGR product image
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TI SN74ABT16543DGGRRoHS

Manufacturer
MPN
SN74ABT16543DGGR
LCSC Part #
C2865087
Packaging
TSSOP-56
Customer #
Key Attributes
16-BIT REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS
Datasheetpdf iconTI SN74ABT16543DGGR
In-Stock: 114
114 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.4304$ 2.43
10+$ 2.0442$ 20.44
30+$ 1.8011$ 54.03
100+$ 1.5516$ 155.16
500+$ 1.439$ 719.50
1,000+$ 1.3907$ 1390.70
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Logic/Buffers, Drivers, Receivers, Transceivers
ManufacturerTI
PackagingTSSOP-56
Input type-
Current - Output High(IOH)32mA
Series74ABT
Voltage - Supply4.5V~5.5V
Operating Temperature-40℃~+85℃
Output TypeTri-State
Current - Output Low(IOL)64mA
Number of Bits per Element8
Channel TypeBidirectional
FeaturesOutput enable
Number of Elements2
Propagation Delay2.5ns@5V,50pF
Quiescent Current2mA

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

The 'ABT16543' 16-bit registered transceivers contain two sets of D-type latches for temporary storage of data flowing in either direction. The 'ABT16543 can be used as two 8-bit transceivers or one 16-bit transceiver. Separate latch-enable (LEAB or LEBA) and output-enable (OEAB or OEBA) inputs are provided for each register to permit independent control in either direction of data flow.

The A-to-B enable (CEAB) input must be low to enter data from A or to output data from B. If CEAB is low and LEAB is low, the A-to-B latches are transparent; a subsequent low-to-high transition of LEAB puts the A latches in the storage mode. With CEAB and OEAB both low, the 3-state B outputs are active and reflect the data present at the output of the A latches. Data flow from B to A is similar but requires using the CEBA, LEBA, and OEBA inputs.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

Features

AI Translation
  • State-of-the-Art EPIC-IIB BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLO (Output Ground Bounce) < 1V at VCC = 5V, TA = 25℃
  • Distributed VCC and GND Pin Configuration Minimizes High-Speed Switching Noise
  • Flow-Through Architecture Optimizes PCB Layout
  • High-Drive Outputs (-32-mA IoH, 64-mA IoL)
  • Package Options Include Plastic 300-mil Shrink Small-Outline (DL) and Thin Shrink Small-Outline (DGG) Packages and 380-mil Fine-Pitch Ceramic Flat (WD) Package Using 25-mil Center-to-Center Spacings