LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
R+O HL2312 product image
  • HL2312 thumbnail 1
  • HL2312 thumbnail 2
  • HL2312 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

R+O HL2312RoHS

Manufacturer
R+OAsian Brands
MPN
HL2312
LCSC Part #
C28646272
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 20V 5.5A SOT-23
Datasheetpdf iconR+O HL2312
In-Stock: 29,670
29,670 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0436$ 0.44
100+$ 0.0347$ 3.47
300+$ 0.0303$ 9.09
3,000+$ 0.027$ 81.00
6,000+$ 0.0243$ 145.80
9,000+$ 0.023$ 207.00
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)82pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))620mV
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)19.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)418pF
Gate Charge(Qg)6nC@4.5V
TypeN-Channel
Report an ErrorShow similar products (0) >

Features

AI Translation
  • Drain-source voltage (VDS) = 20 V
  • Drain current (ID) = 5.5 A
  • On-resistance (RDS(on)) < 25 mΩ at gate-source voltage (VGS) = 4.5 V
  • On-resistance (RDS(on)) < 32 mΩ at gate-source voltage (VGS) = 2.5 V
  • Trench power medium-voltage MOSFET technology
  • Voltage-controlled small-signal switching
  • Fast switching speed

Applications

AI Translation
  • Battery-powered systems
  • Solid-state relays
  • Direct logic-level interface: TTL/CMOS