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R+O HL2306RoHS

Manufacturer
R+OAsian Brands
MPN
HL2306
LCSC Part #
C28646262
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 30V 3.5A SOT-23
Datasheetpdf iconR+O HL2306
In-Stock: 15,660
15,660 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.035$ 0.70
200+$ 0.0273$ 5.46
600+$ 0.023$ 13.80
3,000+$ 0.0204$ 61.20
9,000+$ 0.0182$ 163.80
21,000+$ 0.017$ 357.00
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingSOT-23
Drain to Source Voltage30V
Output Capacitance(Coss)49pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)29.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)363pF
Gate Charge(Qg)7.2nC@10V
TypeN-Channel
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Introduction

AI Translation

This 30V low-voltage SGT MOSFET achieves ultra-low on-resistance and gate charge. With an excellent balance between switching performance and conduction performance, the GBS032R4PMAR delivers extremely high efficiency in both hard-switching and soft-switching topologies. The GBS032R4PMAR is available in a PDFN5*6 package.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 30V
  • Drain Current (ID) = 3.5A
  • On-Resistance (RDS(on)) < 39 mΩ at VGS = 10V
  • On-Resistance (RDS(on)) < 59 mΩ at VGS = 4.5V
  • Advanced trench process technology
  • Low threshold voltage
  • Fast switching speed

Applications

AI Translation
  • Load switch for portable devices
  • Voltage-controlled small-signal switch
  • Direct logic-level interface: TTL/CMOS