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TI CSD19531KCSRoHS

Manufacturer
TI
MPN
CSD19531KCS
LCSC Part #
C2862209
Packaging
TO-220AB-3
Customer #
Key Attributes
100V N-Channel MOSFET, Current:110A, Breakdown Voltage:100V
Datasheetpdf iconTI CSD19531KCS
In-Stock: 3
3 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.4853$ 2.49
10+$ 2.0931$ 20.93
50+$ 1.8473$ 92.37
100+$ 1.595$ 159.50
500+$ 1.4827$ 741.35
1,000+$ 1.4323$ 1432.30
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingTO-220AB-3
Drain to Source Voltage100V
Output Capacitance(Coss)728pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)6.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.87nF
Gate Charge(Qg)49nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

100 V, 6.4 mΩ, TO-220 NexFET power MOSFET designed to significantly reduce losses in power conversion applications.

Features

AI Translation
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Lead-free lead finish
  • RoHS compliant
  • Halogen-free
  • Transistor (TO)-220 plastic package

Applications

AI Translation
  • Secondary-side synchronous rectifier
  • Hot-swap telecom applications
  • Motor control