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TI TLV2314IDGKRRoHS

Manufacturer
TI
MPN
TLV2314IDGKR
LCSC Part #
C2860304
Packaging
VSSOP-8
Customer #
Key Attributes
3MHz, low-power, internal EMI filter, RRIO operational amplifier
Datasheetpdf iconTI TLV2314IDGKR
In-Stock: 16
16 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.722$ 1.72
10+$ 1.4372$ 14.37
30+$ 1.2809$ 38.43
100+$ 1.1035$ 110.35
500+$ 1.0238$ 511.90
1,000+$ 0.988$ 988.00
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
ManufacturerTI
PackagingVSSOP-8
Number of Channels2
Vos - Input Offset Voltage750uV
Slew Rate1.5V/us
Input Offset Current(Ios)1pA
Input offset current drift(Ios TC)-
FeaturesEMI filtering/RF suppression;ESD protection
Operating Temperature-40℃~+125℃
Common Mode Rejection Ratio(CMRR)75dB
Ib - Input Bias Current1pA
Output Current22mA
Maximum Power Supply Range (Vdd-Vss)5.5V
Input Offset Voltage Drift(Vos TC)2uV/℃
Quiescent Current250uA
Gain Bandwidth Product3MHz
Input Voltage Noise Density16nV/√Hz@1kHz
Dual Supply-2.75V~-900mV;900mV~2.75V
Rail to RailRail-to-Rail Input, Rail-to-Rail Output
Single Supply1.8V~5.5V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The TLV314 family of single, dual, and quad operational amplifiers represents a new generation of low-power, general-purpose op-amps. These devices feature rail-to-rail input and output swing (RRIO), low quiescent current (typical 150μA/channel at 5V), and a high bandwidth of 3MHz. For battery-powered applications requiring a good balance between performance and cost, these amplifiers are highly attractive. In addition, the TLV314 family architecture achieves input bias current as low as 1pA, making it suitable for applications with source impedances up to the megaohm range. The TLV314 devices are designed with a robust, user-friendly approach for circuit designers: unity-gain stable, with RRIO and integrated RF/EMI rejection filtering, capacitive load drive up to 300pF, no phase inversion under overdrive conditions, and high ESD protection (4kV HBM). These devices are optimized for low-voltage operation from 1.8V (±0.9V) to 5.5V (±2.75V) and are rated for operation over the extended industrial temperature range of -40°C to +125°C.

Features

AI Translation
  • Low offset voltage: 0.75mV (typical)
  • Low input bias current: 1pA (typical)
  • Wide supply voltage range: 1.8V to 5.5V
  • Rail-to-rail input and output
  • Gain bandwidth: 3MHz
  • Low IQ: 250μA/channel (maximum)
  • Low noise: 16nV/√Hz at 1kHz
  • Internal RF/EMI filter
  • Extended temperature range: -40°C to +125°C

Applications

AI Translation
  • White goods handheld test equipment
  • Portable blood glucose meters
  • Remote sensing
  • Active filters
  • Industrial automation battery-powered electronics