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TI CSD25202W15RoHS

Manufacturer
TI
MPN
CSD25202W15
LCSC Part #
C2859947
Packaging
DSBGA-9
Customer #
Key Attributes
MOSFET P-CH 20V 4A DSBGA-9
Datasheetpdf iconTI CSD25202W15
In-Stock: 335
335 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.5492$ 0.55
10+$ 0.541$ 5.41
30+$ 0.5346$ 16.04
100+$ 0.5297$ 52.97
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingDSBGA-9
Drain to Source Voltage20V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.05V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)52mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)1.01nF
Gate Charge(Qg)7.5nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This 21 mΩ, 20 V device is designed to deliver the lowest on-resistance and gate charge in an ultra-thin, thermally efficient 1.5 mm × 1.5 mm small-outline package. The combination of low on-resistance, compact package size, and low profile makes this device ideal for space-constrained, battery-powered applications.

Features

AI Translation
  • Low resistance
  • Small package 1.5 mm × 1.5 mm
  • Gate ESD protection - 3kV
  • Lead-free
  • RoHS compliant
  • Halogen-free
  • Gate-source voltage clamp

Applications

AI Translation
  • Battery Management
  • Battery Protection