JSMSEMI IRF640NPBF-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRF640NPBF-JSM |
| LCSC Part # | C2857860 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET 200V 18A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 38nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
GreenMOS high-voltage MOSFETs utilize charge balance technology to achieve excellent low on-resistance and low gate charge. Designed to minimize conduction losses, they deliver superior switching performance and robust avalanche capability. The GreenMOS General-Purpose series is optimized for ultimate switching performance to minimize switching losses. It is designed for high power density applications to meet the highest efficiency standards.
Features
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3787$ 0.3409 | $ 1.70 |
| 50+ | $ 0.28$ 0.2520 | $ 12.60 |
| 150+ | $ 0.2448$ 0.2204 | $ 33.06 |
| 500+ | $ 0.2008$ 0.1808 | $ 90.40 |
| 2,000+ | $ 0.1812$ 0.1631 | $ 326.20 |
| 5,000+ | $ 0.1694$ 0.1525 | $ 762.50 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 38nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
GreenMOS high-voltage MOSFETs utilize charge balance technology to achieve excellent low on-resistance and low gate charge. Designed to minimize conduction losses, they deliver superior switching performance and robust avalanche capability. The GreenMOS General-Purpose series is optimized for ultimate switching performance to minimize switching losses. It is designed for high power density applications to meet the highest efficiency standards.
Features
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
C2857860 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



