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Infineon IMBG120R116M2HXTMA1
| Manufacturer | |
| MPN | IMBG120R116M2HXTMA1 |
| LCSC Part # | C28489444 |
| Packaging | TO-263-7 |
| Customer # | |
| Key Attributes | SICFET 1.2kV 21.2A TO-263-7 |
| Datasheet |  Infineon IMBG120R116M2HXTMA1 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-7 | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 21.2A | |
| Output Capacitance(Coss) | 19pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5.1V | |
| Pd - Power Dissipation | 123W | |
| RDS(on) | 115.7mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 500pF | |
| Gate Charge(Qg) | 14.4nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 15 A at Tc = 100°C
- RDS(on) = 115.7 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- .XT interconnection technology for best-in-class thermal performance
Applications
AI Translation
- EV Charging
- Online UPS/Industrial UPS
- String inverter
- General purpose drives (GPD)
In-Stock: 6
6 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 5.914 | $ 5.91 |
| 10+ | $ 5.0322 | $ 50.32 |
| 30+ | $ 4.4964 | $ 134.89 |
| 100+ | $ 4.0466 | $ 404.66 |
Standard Packaging1000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-7 | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 21.2A | |
| Output Capacitance(Coss) | 19pF | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5.1V | |
| Pd - Power Dissipation | 123W | |
| RDS(on) | 115.7mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 500pF | |
| Gate Charge(Qg) | 14.4nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 15 A at Tc = 100°C
- RDS(on) = 115.7 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- .XT interconnection technology for best-in-class thermal performance
Applications
AI Translation
- EV Charging
- Online UPS/Industrial UPS
- String inverter
- General purpose drives (GPD)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |