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Infineon IMBG120R012M2HXTMA1
| Manufacturer | |
| MPN | IMBG120R012M2HXTMA1 |
| LCSC Part # | C28441914 |
| Packaging | TO-263-7 |
| Customer # | |
| Key Attributes | SICFET 1.2kV 144A TO-263-7 |
| Datasheet |  Infineon IMBG120R012M2HXTMA1 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-7 | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 144A | |
| Output Capacitance(Coss) | 176pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5.1V | |
| Pd - Power Dissipation | 600W | |
| RDS(on) | 12.2mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.05nF | |
| Gate Charge(Qg) | 124nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- VDSS = 1200 V at TVj = 25°C
- IDDC = 102 A at TC = 100°C
- RDSS(on) = 12.2 mΩ at VGS = 18 V, TVj = 25°C
- Very low switching losses
- Overload operation up to TVj = 200°C
- Short circuit withstand time 2 μs
- Benchmark gate threshold voltage, VDDC(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- XT interconnection technology for best-in-class thermal performance
Applications
AI Translation
- EV Charging
- Online UPS/Industrial UPS
- String inverter
- General purpose drives (GPD)
In-Stock: 3
3 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 24.9241 | $ 24.92 |
| 30+ | $ 23.6367 | $ 709.10 |
Standard Packaging1000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-7 | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 144A | |
| Output Capacitance(Coss) | 176pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5.1V | |
| Pd - Power Dissipation | 600W | |
| RDS(on) | 12.2mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.05nF | |
| Gate Charge(Qg) | 124nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- VDSS = 1200 V at TVj = 25°C
- IDDC = 102 A at TC = 100°C
- RDSS(on) = 12.2 mΩ at VGS = 18 V, TVj = 25°C
- Very low switching losses
- Overload operation up to TVj = 200°C
- Short circuit withstand time 2 μs
- Benchmark gate threshold voltage, VDDC(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- XT interconnection technology for best-in-class thermal performance
Applications
AI Translation
- EV Charging
- Online UPS/Industrial UPS
- String inverter
- General purpose drives (GPD)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |