VISHAY SI4186DY-T1-GE3
| Manufacturer | |
| MPN | SI4186DY-T1-GE3 |
| LCSC Part # | C2842887 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 35.8A SO-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 35.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 453pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.63nF | |
| Gate Charge(Qg) | 90nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 35.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 453pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.63nF | |
| Gate Charge(Qg) | 90nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET power MOSFET
- 100 % Rg and UIS tested
Applications
AI Translation
- OR-ing
- DC/DC low-side switch
In-Stock: 4,830
4,830 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0589 | $ 1.06 |
| 10+ | $ 0.8751 | $ 8.75 |
| 30+ | $ 0.7726 | $ 23.18 |
| 100+ | $ 0.6588 | $ 65.88 |
| 500+ | $ 0.6084 | $ 304.20 |
| 1,000+ | $ 0.5856 | $ 585.60 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 35.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 453pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.63nF | |
| Gate Charge(Qg) | 90nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 35.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 453pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.63nF | |
| Gate Charge(Qg) | 90nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET power MOSFET
- 100 % Rg and UIS tested
Applications
AI Translation
- OR-ing
- DC/DC low-side switch
C2842887 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

