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onsemi MBRD835LT4GRoHS

Manufacturer
onsemi
MPN
MBRD835LT4G
LCSC Part #
C28423
Packaging
TO-252-2(DPAK)
Customer #
Key Attributes
DIODE SCHOTTKY 35V TO-252-2(DPAK)
Datasheetpdf icononsemi MBRD835LT4G
In-Stock: 5,698
5,698 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.5126$ 0.51
10+$ 0.4169$ 4.17
30+$ 0.3748$ 11.24
100+$ 0.3228$ 32.28
500+$ 0.2628$ 131.40
1,000+$ 0.2499$ 249.90
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
Manufactureronsemi
PackagingTO-252-2(DPAK)
Diode Configuration1 Independent
Operating Junction Temperature Range-65℃~+150℃
Voltage - DC Reverse (Vr) (Max)35V
Voltage - Forward(Vf@If)510mV@8A
Reverse Leakage Current (Ir)1.4mA@35V
Non-Repetitive Peak Forward Surge Current75A
Current - Rectified8A
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits.

Features

AI Translation
  • Low Forward Voltage
  • 150℃ Operating Junction Temperature
  • Epoxy Meets UL 94 V-0 @ 0.125 in
  • Compact Size
  • Lead Formed for Surface Mount
  • SBRD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Po-Free and are RoHS Compliant*