LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
GOFORD G18NP06Y product image
Images for reference only

GOFORD G18NP06YRoHS

Manufacturer
GOFORDAsian Brands
MPN
G18NP06Y
LCSC Part #
C28422876
Packaging
TO-252-4Dual
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 60V 18A TO-252-4Dual
Datasheetpdf iconGOFORD G18NP06Y
In-Stock: 50
50 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
QtyUnit PriceTotal Amount
1+$ 0.5811$ 0.58
10+$ 0.4684$ 4.68
30+$ 0.4113$ 12.34
100+$ 0.3557$ 35.57
500+$ 0.3224$ 161.20
1,000+$ 0.3049$ 304.90
Standard Packaging2500/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerGOFORD
PackagingTO-252-4Dual
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)135pF;201pF
Current - Continuous Drain(Id)18A
RDS(on)26mΩ@10V;33mΩ@10V
Pd - Power Dissipation45W;50W
Gate Threshold Voltage (Vgs(th))1.7V;2.5V
Drain to Source Voltage60V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)96pF;160pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.446nF;2.696nF
Gate Charge(Qg)22nC;25nC
Vgs±20V
Report an ErrorShow similar products (0) >

Introduction

AI Translation

G18NP06Y utilizes advanced trench technology to deliver excellent on-resistance RDS(ON) and low gate charge, suitable for a wide range of applications.

Features

AI Translation
  • NMOS
  • Drain-Source Voltage VDS: 60V
  • Drain Current ID (VGS = 10V): 18A
  • On-Resistance RDS(ON) (VGS = 10V): < 35mΩ
  • On-Resistance RDS(ON) (VGS = 4.5V): < 40mΩ
  • 100% Avalanche Tested
  • RoHS Compliant
  • PMOS
  • Drain-Source Voltage VDS: -60V
  • Drain Current ID (VGS = -10V): -18A
  • On-Resistance RDS(ON) (VGS = -10V): < 45mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

Applications

AI Translation
  • Power switch
  • DC/DC converter