Infineon/CYPRESS CY62167EV30LL-45BVXIT

The CY62167EV30 is a high-performance CMOS static RAM organized as 1M words by 16 bits or 2M words by 8 bits. This device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device in standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high-impedance state when: the device is deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or a write operation is in progress (CE1 LOW, CE2 HIGH and WE LOW).

• TSOP I package configurable as 1Mx16 or 2Mx8 SRAM
• Very high speed: 45 ns
• Temperature ranges Automotive-A: -40 ℃ to +85 ℃
• Wide voltage range: 2.20 V to 3.60 V
• Ultra-low standby power
  • Typical standby current: 1.5 μA
  • Maximum standby current: 12 μA
• Ultra-low active power
  • Typical active current: 2.2 mA at f = 1 MHz
• Easy memory expansion with CE1, CE2, and OE Features
• Automatic power-down when deselected
• CMOS for optimum speed and power
• Offered in Pb-free 48-ball VFBGA and 48-pin TSOP I package