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KIA Semicon Tech KCB3010ARoHS

Manufacturer
KIA Semicon TechAsian Brands
MPN
KCB3010A
LCSC Part #
C2839424
Packaging
TO-263
Customer #
Key Attributes
MOSFET N-CH 100V 163A TO-263
Datasheetpdf iconKIA Semicon Tech KCB3010A
In-Stock: 830
830 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.7181$ 0.72
10+$ 0.606$ 6.06
30+$ 0.5492$ 16.48
100+$ 0.4939$ 49.39
500+$ 0.4533$ 226.65
800+$ 0.4354$ 348.32
Standard Packaging800/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerKIA Semicon Tech
PackagingTO-263
Drain to Source Voltage100V
Output Capacitance(Coss)880pF
Current - Continuous Drain(Id)163A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation175W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)6.7nF
Gate Charge(Qg)89.5nC@10V
TypeN-Channel
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Introduction

AI Translation

KCX3010A the N-channel Enhanced Power MOSFETS, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications.

Features

AI Translation
  • Fast Switching
  • Low On-Resistance (typ.) RDS(on)=4.0mΩ
  • Low Gate Charge
  • Uses advanced SGT technology
  • Low Reverse transfer capacitances
  • High avalanche ruggedness

Applications

AI Translation
  • Switching applications
  • Motor drivers