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VISHAY SI7923DN-T1-GE3
| Manufacturer | |
| MPN | SI7923DN-T1-GE3 |
| LCSC Part # | C2838510 |
| Packaging | PowerPAK1212-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH ARR 30V 6.4A PowerPAK1212-8 |
| Datasheet |  VISHAY SI7923DN-T1-GE3 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Current - Continuous Drain(Id) | 6.4A | |
| RDS(on) | 75mΩ@4.5V | |
| Pd - Power Dissipation | 2.8W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 21nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Current - Continuous Drain(Id) | 6.4A | |
| RDS(on) | 75mΩ@4.5V | |
| Pd - Power Dissipation | 2.8W | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 21nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Introduction
Dual P-Channel 30 V(D-S) MOSFET, PowerPAK 1212-8 delivers ultra-low thermal impedance in a compact package, making it ideal for space-constrained applications. It is a derivative of the PowerPAK SO-8, utilizing the same packaging technology to maximize die area. The exposed die attach pad on the bottom provides a direct, low-resistance thermal path to the substrate on which the device is mounted, bringing the advantages of the PowerPAK SO-8 into a smaller package with equivalent thermal performance. Its footprint is comparable to TSOP-6, more than 40% smaller than standard TSSOP-8, with more than twice the die capacity of standard TSOP-6, thermal performance an order of magnitude better than SO-8, 20x better than TSSOP-8, capable of utilizing any PC board heat spreading capability, and compared to TSSOP-8, reduces junction temperature and improves die efficiency by approximately 20%. Single and dual PowerPAK 1212-8 share the same pin assignment as single and dual PowerPAK SO-8, and the low-profile 1.05 mm height makes it an ideal choice for space-constrained applications.
Features
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET Power MOSFET
- New Low Thermal Resistance PowerPAK Package
Applications
- Portable - Battery Switch - Load Switch
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Current - Continuous Drain(Id) | 6.4A | |
| RDS(on) | 75mΩ@4.5V | |
| Pd - Power Dissipation | 2.8W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 21nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Current - Continuous Drain(Id) | 6.4A | |
| RDS(on) | 75mΩ@4.5V | |
| Pd - Power Dissipation | 2.8W | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 21nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Introduction
Dual P-Channel 30 V(D-S) MOSFET, PowerPAK 1212-8 delivers ultra-low thermal impedance in a compact package, making it ideal for space-constrained applications. It is a derivative of the PowerPAK SO-8, utilizing the same packaging technology to maximize die area. The exposed die attach pad on the bottom provides a direct, low-resistance thermal path to the substrate on which the device is mounted, bringing the advantages of the PowerPAK SO-8 into a smaller package with equivalent thermal performance. Its footprint is comparable to TSOP-6, more than 40% smaller than standard TSSOP-8, with more than twice the die capacity of standard TSOP-6, thermal performance an order of magnitude better than SO-8, 20x better than TSSOP-8, capable of utilizing any PC board heat spreading capability, and compared to TSSOP-8, reduces junction temperature and improves die efficiency by approximately 20%. Single and dual PowerPAK 1212-8 share the same pin assignment as single and dual PowerPAK SO-8, and the low-profile 1.05 mm height makes it an ideal choice for space-constrained applications.
Features
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET Power MOSFET
- New Low Thermal Resistance PowerPAK Package
Applications
- Portable - Battery Switch - Load Switch
C2838510 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |