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MSKSEMI TPD1E1B04DPYR-MS product image
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MSKSEMI TPD1E1B04DPYR-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
TPD1E1B04DPYR-MS
LCSC Part #
C2836332
Packaging
DFN1006-2L
Customer #
Key Attributes
ESD DIODE 5VWM 21VC DFN1006-2L
Datasheetpdf iconMSKSEMI TPD1E1B04DPYR-MS
In-Stock: 4,880
4,880 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0224$ 0.0191$ 0.38
200+$ 0.0175$ 0.0149$ 2.98
600+$ 0.0148$ 0.0126$ 7.56
2,000+$ 0.0118$ 0.0101$ 20.20
10,000+$ 0.0104$ 0.0089$ 89.00
20,000+$ 0.0096$ 0.0082$ 164.00
Standard Packaging10000/Full Reel
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Products Specifications

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TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerMSKSEMI
PackagingDFN1006-2L
Clamping Voltage21V
Peak Pulse Current (Ipp)5A
Peak Pulse Power Dissipation (Ppp)100W
Number of Channels1
Voltage - Breakdown5.6V
typeESD
Reverse Leakage Current (Ir)1uA
PolarityBidirectional
Reverse Stand-Off Voltage (Vrwm)5V
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging10000
Sales UnitPiece

Introduction

AI Translation

TPD1E1B04DPYR - MS can protect sensitive semiconductor components from damage or failure caused by ESD and other voltage-induced transient events. Featuring large cross-section junctions capable of conducting high transient currents, they offer ideal electrical characteristics for board-level protection, including fast response time and low operating voltage. It provides designers with the flexibility to protect a single bidirectional line in applications where arrays are not suitable.

Features

AI Translation
  • 100W peak pulse power per line (tP = 8/20μs)
  • DFN1006-2L package
  • MLV (0402) replacement
  • Bidirectional configuration
  • Typical response time < 1 ns
  • Low clamping voltage
  • RoHS compliant
  • Data line transient protection per IEC61000-4-2 (ESD) ±15KV (air discharge), ±12KV (contact discharge); IEC61000-4-4 (EFT) 40A (5/50ns)

Applications

AI Translation
  • Mobile phones
  • Portable devices
  • Digital cameras
  • Power supplies