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ST STP11NM60FD product image
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ST STP11NM60FDRoHS

Manufacturer
ST
MPN
STP11NM60FD
LCSC Part #
C283629
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 600V 11A TO-220
Datasheetpdf iconST STP11NM60FD
In-Stock: 65
65 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.8713$ 1.87
10+$ 1.8312$ 18.31
30+$ 1.8039$ 54.12
100+$ 1.7782$ 177.82
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage600V
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)900pF
Gate Charge(Qg)40nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

Features

AI Translation
  • 100% avalanche tested
  • High dv/dt and avalanche capabilities
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Tight process control and high manufacturing yields

Applications

AI Translation
  • Switching application