ST STN2NF10
| Manufacturer | |
| MPN | STN2NF10 |
| LCSC Part # | C283505 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 2.4A SOT-223 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 2.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 3.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 280pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Applications
AI Translation
- Switching application – DC-DC converters
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5281 | $ 0.53 |
| 10+ | $ 0.4176 | $ 4.18 |
| 30+ | $ 0.3705 | $ 11.12 |
| 100+ | $ 0.3104 | $ 31.04 |
| 500+ | $ 0.2844 | $ 142.20 |
| 1,000+ | $ 0.2681 | $ 268.10 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 2.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 3.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 280pF | |
| Gate Charge(Qg) | 14nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Applications
AI Translation
- Switching application – DC-DC converters
C283505 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



