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GOSEMICON GBI7A54NMAR
| Manufacturer | GOSEMICONAsian Brands |
| MPN | GBI7A54NMAR |
| LCSC Part # | C28324638 |
| Packaging | DFN-8L-EP(4x4) |
| Customer # | |
| Key Attributes | 120V Boot, 4A Peak, Half-Bridge Driver with Low Switching Loss |
| Datasheet |  GOSEMICON GBI7A54NMAR |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | GOSEMICON | |
| Packaging | DFN-8L-EP(4x4) | |
| Input Logic Level - Low | 900mV~1.3V | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 240uA | |
| Input Logic Level - High | 1.9V~2.4V | |
| Operating Temperature | -40℃~+150℃ | |
| Voltage - Supply | 8V~20V | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 4A | |
| Rise Time | 7ns | |
| Fall Time | 5ns | |
| Current - Output High(IOH) | 4A | |
| Features | Under Voltage Protection;Interleaved conduction protection;Built-in bootstrap diode | |
| Load Type | MOSFET |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The GBI7A54, provides 4A peak source and sink current along with rail-to-rail driving capability for MOSFET used in half-bridge or synchronous buck configuration. The device features a minimum 24ns input to output propagation delay and 20V power supply rail makes it suitable for high frequency power converter application. The negative input is acceptable down to -10V and the HS pin is able to tolerate significant negative voltage enhance the system noise immunity. The wide input hysteresis is compatible for both TTL and CMOS low voltage logic. The device adopts non-overlap design to avoid the shootthrough between high-side and low-side driver output stage. It operates over a wide temperature range - 40 °C to 150 °C.
The GBI7A54 is a high-voltage gate driver designed to drive both the high-side and the low-side N-channel FETs in a synchronous buck or a half-bridge configuration. The two outputs are independently controlled by two TTL-compatible input signals. The floating high-side driver is capable of working with HS voltage up to 120V with respect to VSS. A 120V bootstrap diode is integrated to charge high-side gate drive bootstrap capacitor.
Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails. The driver also has input interlock functionality, which shuts off both the outputs when the two inputs have overlap.
The GBI7A54 operates under a supply voltage range between 8V to 20V. It’s recommended to put two VDD bypass capacitor in parallel to prevent noise problems on supply VDD. It has to put a 0.1uF SMT ceramic capacitor as close as possible between the VDD pin and the GND pin. To avoid the unexpected VDD glitch, a large capacitor (ex. 1uF or 10uF) with relatively low ESR must be connected in parallel with that 0.1uF capacitor. This parallel combination of capacitors presents a low impedance characteristic for the expected current levels and switching frequencies in the application.
In GBI7A54, Both the high-side and the low-side driver stages include UVLO protection circuitry which monitors the supply voltage (VDD) and the bootstrap capacitor voltage (VHB–VHS). The UVLO circuit inhibits each output until sufficient supply voltage is available to turn on the external MOSFETs. The builtin UVLO hysteresis prevents chattering during supply voltage variations. When the supply voltage is applied to the VDD pin of the device, both the outputs are held low until VDD exceeds the UVLO threshold, typically 7V. UVLO condition on the bootstrap capacitor (VHB–VHS) disables only the high- side output (HO).
The GBI7A54 input is compatible with TTL logic which is independent of the VDD supply voltage. The typical threshold is 2.1V (high) and 1.1V (low), which makes the device easily driven by PWM control signals derived from 3.3V and 5V digital power-controller devices. The device features wider hysteresis compared to typical threshold of 0.5V which offers enhanced noise immunity. It also implements tight control of the input threshold voltage that ensures stable operation across temperature. The low input capacitance on the input pins increases switching speed and reduces the propagation delay.
The two inputs operate independently, with an exception that both outputs will be pulled low when both inputs are high or overlap. The independence allows for full control of two outputs compared to the gate drivers that have a single input. The device has input interlock or cross-conduction protection.
Features
- Drives two MOSFETs in high-side and low-side Configuration
- 4A Peak Source/Sink Current
- 8V - 20V Wide Supply Voltage Range
- Absolute Maximum Boot and HS Voltage 120V
- Down to -10V Negative Input Voltage Capability
- Absolute Negative Voltage Handling on HS (-20V)
- Fast Propagation Delay: 28ns rising/24ns falling
- 3ns Delay Matching
- Fast Rising and Falling Time: 7ns and 5ns with 1nF capacitor load
- Input interlock
- Under Voltage Lock Out Protection
- Low Quiescent Current: 240uA
- Package with DFN4x4-8L, eSOP-8L, DFN3x3-10L
Applications
- Power MOSFET Gate Driver
- IGBT Gate Driver
- Switching Power Supply
- Motor Control
- Solar Power
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1804 | $ 1.18 |
| 10+ | $ 0.9883 | $ 9.88 |
| 30+ | $ 0.8841 | $ 26.52 |
| 100+ | $ 0.7653 | $ 76.53 |
| 500+ | $ 0.7132 | $ 356.60 |
| 1,000+ | $ 0.6904 | $ 690.40 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | GOSEMICON | |
| Packaging | DFN-8L-EP(4x4) | |
| Input Logic Level - Low | 900mV~1.3V | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 240uA | |
| Input Logic Level - High | 1.9V~2.4V | |
| Operating Temperature | -40℃~+150℃ | |
| Voltage - Supply | 8V~20V | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 4A | |
| Rise Time | 7ns | |
| Fall Time | 5ns | |
| Current - Output High(IOH) | 4A | |
| Features | Under Voltage Protection;Interleaved conduction protection;Built-in bootstrap diode | |
| Load Type | MOSFET |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The GBI7A54, provides 4A peak source and sink current along with rail-to-rail driving capability for MOSFET used in half-bridge or synchronous buck configuration. The device features a minimum 24ns input to output propagation delay and 20V power supply rail makes it suitable for high frequency power converter application. The negative input is acceptable down to -10V and the HS pin is able to tolerate significant negative voltage enhance the system noise immunity. The wide input hysteresis is compatible for both TTL and CMOS low voltage logic. The device adopts non-overlap design to avoid the shootthrough between high-side and low-side driver output stage. It operates over a wide temperature range - 40 °C to 150 °C.
The GBI7A54 is a high-voltage gate driver designed to drive both the high-side and the low-side N-channel FETs in a synchronous buck or a half-bridge configuration. The two outputs are independently controlled by two TTL-compatible input signals. The floating high-side driver is capable of working with HS voltage up to 120V with respect to VSS. A 120V bootstrap diode is integrated to charge high-side gate drive bootstrap capacitor.
Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails. The driver also has input interlock functionality, which shuts off both the outputs when the two inputs have overlap.
The GBI7A54 operates under a supply voltage range between 8V to 20V. It’s recommended to put two VDD bypass capacitor in parallel to prevent noise problems on supply VDD. It has to put a 0.1uF SMT ceramic capacitor as close as possible between the VDD pin and the GND pin. To avoid the unexpected VDD glitch, a large capacitor (ex. 1uF or 10uF) with relatively low ESR must be connected in parallel with that 0.1uF capacitor. This parallel combination of capacitors presents a low impedance characteristic for the expected current levels and switching frequencies in the application.
In GBI7A54, Both the high-side and the low-side driver stages include UVLO protection circuitry which monitors the supply voltage (VDD) and the bootstrap capacitor voltage (VHB–VHS). The UVLO circuit inhibits each output until sufficient supply voltage is available to turn on the external MOSFETs. The builtin UVLO hysteresis prevents chattering during supply voltage variations. When the supply voltage is applied to the VDD pin of the device, both the outputs are held low until VDD exceeds the UVLO threshold, typically 7V. UVLO condition on the bootstrap capacitor (VHB–VHS) disables only the high- side output (HO).
The GBI7A54 input is compatible with TTL logic which is independent of the VDD supply voltage. The typical threshold is 2.1V (high) and 1.1V (low), which makes the device easily driven by PWM control signals derived from 3.3V and 5V digital power-controller devices. The device features wider hysteresis compared to typical threshold of 0.5V which offers enhanced noise immunity. It also implements tight control of the input threshold voltage that ensures stable operation across temperature. The low input capacitance on the input pins increases switching speed and reduces the propagation delay.
The two inputs operate independently, with an exception that both outputs will be pulled low when both inputs are high or overlap. The independence allows for full control of two outputs compared to the gate drivers that have a single input. The device has input interlock or cross-conduction protection.
Features
- Drives two MOSFETs in high-side and low-side Configuration
- 4A Peak Source/Sink Current
- 8V - 20V Wide Supply Voltage Range
- Absolute Maximum Boot and HS Voltage 120V
- Down to -10V Negative Input Voltage Capability
- Absolute Negative Voltage Handling on HS (-20V)
- Fast Propagation Delay: 28ns rising/24ns falling
- 3ns Delay Matching
- Fast Rising and Falling Time: 7ns and 5ns with 1nF capacitor load
- Input interlock
- Under Voltage Lock Out Protection
- Low Quiescent Current: 240uA
- Package with DFN4x4-8L, eSOP-8L, DFN3x3-10L
Applications
- Power MOSFET Gate Driver
- IGBT Gate Driver
- Switching Power Supply
- Motor Control
- Solar Power
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |