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HUASHUO HSU4119 product image
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HUASHUO HSU4119RoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSU4119
LCSC Part #
C28314523
Packaging
TO-252
Customer #
Key Attributes
MOSFET P-CH 40V 120A TO-252
Datasheetpdf iconHUASHUO HSU4119
In-Stock: 1,268
1,268 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.6775$ 0.68
10+$ 0.6125$ 6.13
30+$ 0.58$ 17.40
100+$ 0.5475$ 54.75
500+$ 0.5021$ 251.05
1,000+$ 0.4923$ 492.30
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingTO-252
Drain to Source Voltage40V
Output Capacitance(Coss)780pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)660pF
RDS(on)3.5mΩ@10V;4.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)10.7nF
Gate Charge(Qg)190nC@10V
TypeP-Channel
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Introduction

AI Translation

HSU4119 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSU4119 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • 100% guaranteed avalanche capability (EAS)
  • Green/RoHS-compliant devices available
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology