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HUASHUO HSU3119 product image
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HUASHUO HSU3119RoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSU3119
LCSC Part #
C28314522
Packaging
TO-252-2L
Customer #
Key Attributes
MOSFET P-CH 30V 130A TO-252-2L
Datasheetpdf iconHUASHUO HSU3119
In-Stock: 1,820
1,820 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.597$ 0.60
10+$ 0.5337$ 5.34
30+$ 0.5013$ 15.04
100+$ 0.4688$ 46.88
500+$ 0.451$ 225.50
1,000+$ 0.4413$ 441.30
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingTO-252-2L
Drain to Source Voltage30V
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)1.21nF
RDS(on)3mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)12.7nF
Gate Charge(Qg)210nC@10V
TypeP-Channel
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Introduction

AI Translation

HSU3119 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSU3119 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • 100% guaranteed avalanche energy rating (EAS)
  • Green/RoHS-compliant devices available
  • Excellent dv/dt ruggedness
  • Advanced high cell density trench technology