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HUASHUO HSK5N04 product image
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HUASHUO HSK5N04RoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSK5N04
LCSC Part #
C28314510
Packaging
SOT-89
Customer #
Key Attributes
MOSFET N-CH 40V 5A SOT-89
Datasheetpdf iconHUASHUO HSK5N04
In-Stock: 745
745 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1102$ 0.0772$ 0.39
50+$ 0.0868$ 0.0608$ 3.04
150+$ 0.0751$ 0.0526$ 7.89
500+$ 0.0663$ 0.0465$ 23.25
2,500+$ 0.0593$ 0.0416$ 104.00
5,000+$ 0.0557$ 0.0390$ 195.00
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingSOT-89
Drain to Source Voltage40V
Output Capacitance(Coss)51pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)45mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)452pF
Gate Charge(Qg)11nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

HSK5N04 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSK5N04 complies with RoHS and green product requirements, is 100% EAS tested, and carries full functional reliability certification.

Features

AI Translation
  • RoHS-compliant green devices
  • Ultra-low gate charge
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology