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HUASHUO HSBA8024ARoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSBA8024A
LCSC Part #
C2828503
Packaging
PRPAK5x6-8L
Customer #
Key Attributes
MOSFET N-CH 80V 122A PRPAK5x6-8L
Datasheetpdf iconHUASHUO HSBA8024A
In-Stock: 1,449
1,449 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.8132$ 0.81
10+$ 0.7412$ 7.41
30+$ 0.7029$ 21.09
100+$ 0.6585$ 65.85
500+$ 0.5575$ 278.75
1,000+$ 0.5483$ 548.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingPRPAK5x6-8L
Drain to Source Voltage80V
Current - Continuous Drain(Id)122A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)278pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.58nF
Gate Charge(Qg)84nC@10V
TypeN-Channel
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Introduction

AI Translation

HSBA8024A is a high cell density trench N-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous rectification applications. HSBA8024A complies with RoHS and halogen-free requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.

Features

AI Translation
  • 100% guaranteed avalanche capability (EAS)
  • Available in eco-friendly packages
  • Ultra-low gate charge
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology