HUASHUO HSBB02P15
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSBB02P15 |
| LCSC Part # | C2828496 |
| Packaging | PRPAK3x3-8L |
| Customer # | |
| Key Attributes | MOSFET P-CH 150V 2A PRPAK3x3-8L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK3x3-8L | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 39pF | |
| Current - Continuous Drain(Id) | 2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 7.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| RDS(on) | 780mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 4.5nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
HSBB02P15 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBB02P15 complies with RoHS and green product requirements.
Features
AI Translation
- 100% guaranteed avalanche capability (EAS)
- Green/RoHS-compliant devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
In-Stock: 2,760
2,760 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2241 | $ 1.12 |
| 50+ | $ 0.1758 | $ 8.79 |
| 150+ | $ 0.1552 | $ 23.28 |
| 500+ | $ 0.1237 | $ 61.85 |
| 3,000+ | $ 0.1122 | $ 336.60 |
| 6,000+ | $ 0.1053 | $ 631.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK3x3-8L | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 39pF | |
| Current - Continuous Drain(Id) | 2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 7.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| RDS(on) | 780mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 4.5nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
HSBB02P15 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBB02P15 complies with RoHS and green product requirements.
Features
AI Translation
- 100% guaranteed avalanche capability (EAS)
- Green/RoHS-compliant devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



