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ST SCT040H120G3AGRoHS

Manufacturer
ST
MPN
SCT040H120G3AG
LCSC Part #
C28224958
Packaging
H2PAK-7
Customer #
Key Attributes
SICFET 1.2kV 40A H2PAK-7
Datasheetpdf iconST SCT040H120G3AG
In-Stock: 1
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QtyUnit PriceTotal Amount
1+$ 20.8949$ 20.89
30+$ 19.8584$ 595.75
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingH2PAK-7
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)78pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)54mΩ
Number1 N-channel
Input Capacitance(Ciss)1.329nF
Gate Charge(Qg)54nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Features

AI Translation
  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Source sensing pin for increased efficiency

Applications

AI Translation
  • Main inverter (electric traction)
  • DC/DC converter for EV/HEV
  • On board charger (OBC)