Shenzhen ruichips Semicon RU30J30M
| Manufacturer | Shenzhen ruichips SemiconAsian Brands |
| MPN | RU30J30M |
| LCSC Part # | C2803361 |
| Packaging | PDFN-8(4.9x5.8) |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 30A PDFN-8(4.9x5.8) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Shenzhen ruichips Semicon | |
| Packaging | PDFN-8(4.9x5.8) | |
| Configuration | Half-Bridge | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -40℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 29W | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 12nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is manufactured using the PowerTrench® process, which is optimized to minimize on-resistance while maintaining excellent switching performance.
Features
AI Translation
- 30V/30A, RDS(ON)=7mΩ (Typ.) @ VGS = 10V
- RDS(ON)=9.5mΩ (Typ.) @ VGS = 4.5V
- Fast Switching Speed
- Low gate Charge
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS Compliant)
Applications
AI Translation
- Switching Application Systems
- DC/DC Converters
Not available now
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Shenzhen ruichips Semicon | |
| Packaging | PDFN-8(4.9x5.8) | |
| Configuration | Half-Bridge | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 30A | |
| Operating Temperature - | -40℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 29W | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 12nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is manufactured using the PowerTrench® process, which is optimized to minimize on-resistance while maintaining excellent switching performance.
Features
AI Translation
- 30V/30A, RDS(ON)=7mΩ (Typ.) @ VGS = 10V
- RDS(ON)=9.5mΩ (Typ.) @ VGS = 4.5V
- Fast Switching Speed
- Low gate Charge
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS Compliant)
Applications
AI Translation
- Switching Application Systems
- DC/DC Converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
