SAMSUNG K4B4G1646E-BCNB

Manufacturer	SAMSUNG
MPN	K4B4G1646E-BCNB
LCSC Part #	C2803248
Packaging	FBGA-96
Customer #
Key Attributes	4Gbit 1.425V~1.575V 1.066GHz DDR3 SDRAM FBGA-96 Memory (ICs) RoHS
Datasheet	SAMSUNG K4B4G1646E-BCNB

Products Specifications

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	SAMSUNG
Packaging	FBGA-96
Refresh Current	2mA
Memory Size	4Gbit
Voltage - Supply	1.425V~1.575V
Operating temperature	0℃~+95℃
Clock Frequency	1.066GHz
Features	Auto precharge function;Asynchronous reset function;Dynamic on-chip termination;ZQ calibration function;Data mask function
Memory Format	DDR3 SDRAM
Current - Supply	120mA

AI Translation

JEDEC standard 1.5V(1.425V~1.575V)
VDDQ = 1.5V(1.425V~1.575V)
400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin, 933MHz fCK for 1866Mb/sec/pin, 1066 MHz fCK for 2133Mb/sec/pin
8 Banks
Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13,14
Programmable Additive Latency: 0, CL - 2 or CL - 1 clock
Programmable CAS Write Latency (CWL)=5 (DDR3 - 800), 6 (DDR3 - 1066), 7 (DDR3 - 1333), 8 (DDR3 - 1600), 9 (DDR3 - 1866) and 10 (DDR3 - 2133)
8 - bit pre - fetch
Burst Length: 8, 4 with ICDD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
Bi - directional Differential Data - Strobe
Internal(self) calibration through ZQ pin (RZQ:240 ohm±1 %)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85℃, 3.9us at 85℃ < TCASE

In-Stock: 8

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Qty	Unit Price	Total Amount
1+	$ 14.5889	$ 14.59
10+	$ 14.0098	$ 140.10
30+	$ 13.0071	$ 390.21
112+	$ 12.1304	$ 1358.60
Standard Packaging112/Full Tray

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