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MXIC MX35LF1GE4AB-Z4ITR product image
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MXIC MX35LF1GE4AB-Z4ITRRoHS

Manufacturer
MXIC
MPN
MX35LF1GE4AB-Z4ITR
LCSC Part #
C2802769
Packaging
WSON-8(6x8)
Customer #
Key Attributes
3V,1Gb-bit Serial NAND Flash Memory
Datasheetpdf iconMXIC MX35LF1GE4AB-Z4ITR
In-Stock: 3,500
3,500 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 7.5465$ 75.47
100+$ 6.6363$ 663.63
300+$ 6.0828$ 1824.84
1,000+$ 5.6171$ 5617.10
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerMXIC
PackagingWSON-8(6x8)
Memory Size1Gbit
Voltage - Supply2.7V~3.6V
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency104MHz
FeaturesRead buffer function;Write enable latch;Software reset function;ECC error correction function;Bad block management function;Hardware write protection function;OTP region write protection and lock function
Data Retention - TDR (Year)10 years
Block Erase Time(tBE)1ms
Write Cycle Time(tWC)-
Page Programming Time (Tpp)300us
Standby Supply Current50uA
InterfaceSPI
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

The MX35LF1GE4AB is a 1Gb SLC NAND Flash memory device with Serial interface. The memory array of this device adopted the same cell architecture as the parallel NAND; however implementing the industry standard serial interface. An internal 4-bit ECC logic is implemented in the chip, which is enabled by default. The internal ECC can be disabled or enabled again by command. When the internal 4-bit ECC logic is disabled, the host side needs to handle the 4-bit ECC by host micro controller.

Features

AI Translation
  • 1Gb SLC NAND Flash - Bus: x4 - Page size: (2048 + 64) byte - Block size: (128k + 4k) byte
  • Supports Random data read out by x1/x2/x4 modes, (1-1-1,1-1-2, 1-1-4)
  • Latency of array to register: 25us
  • Frequency: 104MHz
  • Page program time: 300us (typ)
  • Block erase time: 1ms (typ.)
  • Single Voltage Operation: VCC: 2.7 to 3.6V
  • BP bits for block group protection
  • Low Power Dissipation - Max 30mA Active current (Read/Program/Erase) - Sleep Mode - 50uA (Max) standby current
  • High Reliability - Program / Erase Endurance: Typical 100K cycles (with internal 4-bit ECC per (512 + 16) Byte - Data Retention: 10 years
  • Wide Temperature Operating Range -40°C to +85°C
  • Package: 8-WSON (8x6mm)
  • All packaged devices are ReHS Compliant and Halogen-free.