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NXP BGU8009,115RoHS

Manufacturer
MPN
BGU8009,115
LCSC Part #
C2802654
Packaging
XSON-6(0.9x1.1)
Customer #
Key Attributes
18dB 1.559GHz~1.61GHz 1.5V~3.1V 0.65dB -7dBm 4.4mA XSON-6(0.9x1.1) RF Amplifiers RoHS
Datasheetpdf iconNXP BGU8009,115
In-Stock: 4
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QtyUnit PriceTotal Amount
1+$ 0.4411$ 0.44
10+$ 0.3498$ 3.50
30+$ 0.3111$ 9.33
100+$ 0.2631$ 26.31
500+$ 0.2415$ 120.75
1,000+$ 0.2291$ 229.10
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryRF and Wireless/RF Amplifiers
ManufacturerNXP
PackagingXSON-6(0.9x1.1)
Input Return Loss17.5dB
Operating Temperature-40℃~+85℃
Gain18dB
Frequency Range1.559GHz~1.61GHz
Voltage - Supply1.5V~3.1V
Output Return Loss23.5dB
Noise Figure0.65dB
FeaturesLow-power mode;Electrostatic protection;Bias control circuit
IP36dBm
P1dB-7dBm
Current - Supply4.4mA

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

The BGU8009 is, also known as the GPS1201M, a Low-Noise Amplifier (LNA) for GNSS receiver and LTE Band 32 down link applications. This BGU8009 is available in a small plastic 6-pin extremely thin leadless package. The BGU8009 requires one external matching inductor and one external decoupling capacitor. The BGU8009 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance when jamming signals from co-existing cellular transmitters are present. At low jamming power levels, it delivers 18 dB gain at a noise figure of 0.65 dB. During high jamming power levels, resulting, for example from a cellular transmit burst, it temporarily increases its bias current to improve sensitivity.

Features

AI Translation
  • Covers full GNSS L1 band, from 1559 MHz to 1610 MHz and LTE band 32 from 1452 MHz to 1496 MHz
  • Optionally also the GNSS lower L-band can be covered (from 1164 MHz to 1299 MHz) by adding additional matching components as described in the application note AN11353.
  • GNSS:
    • Noise figure = 0.65 dB
    • Gain 18 dB
    • High input 1 dB compression point of -7 dBm
    • High out of band |P3| of 6 dBm
  • LTE B32:
    • Noise figure = 0.65 dB
    • Gain 20 dB
    • High input 1 dB compression point of -8.5 dBm
  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low supply current of 4.2 mA
  • Power-down mode current consumption <1 μA
  • Integrated temperature stabilized bias for easy design.
  • Requires only one input matching inductor and one supply decoupling capacitor
  • Input and output DC decoupled
  • ESD protection on all pins (HBM >2 kV)
  • Integrated matching for the output
  • Available in a 6-pins leadless package 1.1 mm×0.9 mm×0.47 mm; 0.4 mm pitch: SOT1230
  • 180 GHz transit frequency - SiGe:C technology
  • Moisture sensitivity level 1

Applications

AI Translation
  • Smart phones
  • Feature phones
  • Tablets
  • Digital still cameras
  • Digital video cameras
  • RF front-end modules
  • Complete GNSS modules
  • Personal health applications