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NXP BFU725F/N1,115 product image
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NXP BFU725F/N1,115RoHS

Manufacturer
NXP
MPN
BFU725F/N1,115
LCSC Part #
C2802652
Packaging
SOT-343F
Customer #
Key Attributes
TRANS NPN 2.8V 40mA SOT-343F
Datasheetpdf iconNXP BFU725F/N1,115

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerNXP
PackagingSOT-343F
Current - Collector Cutoff100nA
Transition frequency(fT)55GHz
Collector - Emitter Voltage VCEO2.8V
Emitter-Base Voltage VEBO1V
DC Current Gain160
Pd - Power Dissipation136mW
Number1 NPN
typeNPN
Current - Collector(Ic)40mA
Operating Temperature-
Vce Saturation(VCE(sat))-
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features

AI Translation
  • Low noise high gain microwave transistor
  • Noise figure (NF) = 0.7 dB at 5.8 GHz
  • High maximum stable gain 27 dB at 1.8 GHz
  • 110 GHz fT silicon germanium technology

Applications

AI Translation
  • 2nd LNA stage and mixer stage in DBS LNB’s
  • Satellite radio
  • Low noise amplifiers for microwave communications systems
  • WLAN and CDMA applications
  • Analog/digital cordless applications
  • Ka band oscillators (DRO’s)
In-Stock: 95
95 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2971$ 1.49
50+$ 0.2929$ 14.65
150+$ 0.29$ 43.50
500+$ 0.2651$ 132.55
Standard Packaging3000/Full Reel
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