TOSHIBA T2N7002AK,LM(B
| Manufacturer | |
| MPN | T2N7002AK,LM(B |
| LCSC Part # | C27891931 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 60V 200mA 2.1V 320mW 2.8Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 200mA | |
| Output Capacitance(Coss) | 3pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 320mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 700fF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11pF | |
| Gate Charge(Qg) | 270pC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 1 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Gate ESD protection
- Low on-resistance
- RDS(on) = 2.8Ω (typ.) (@VGS = 10V)
- RDS(on) = 3.1Ω (typ.) (@VGS = 5V)
- RDS(on) = 3.2Ω (typ.) (@VGS = 4.5V)
Applications
AI Translation
High-Speed Switching Applications
In-Stock: 201,000
201,000 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 50+ | $ 0.0208 | $ 1.04 |
| 500+ | $ 0.017 | $ 8.50 |
| 1,500+ | $ 0.0149 | $ 22.35 |
| 5,000+ | $ 0.0137 | $ 68.50 |
| 25,000+ | $ 0.0126 | $ 315.00 |
| 50,000+ | $ 0.012 | $ 600.00 |
Standard Packaging1/Full Bag | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 200mA | |
| Output Capacitance(Coss) | 3pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 320mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 700fF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11pF | |
| Gate Charge(Qg) | 270pC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 1 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Gate ESD protection
- Low on-resistance
- RDS(on) = 2.8Ω (typ.) (@VGS = 10V)
- RDS(on) = 3.1Ω (typ.) (@VGS = 5V)
- RDS(on) = 3.2Ω (typ.) (@VGS = 4.5V)
Applications
AI Translation
High-Speed Switching Applications
C27891931 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

