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ST STD10N60M2RoHS

Manufacturer
ST
MPN
STD10N60M2
LCSC Part #
C2764050
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 600V 7.5A DPAK
Datasheetpdf iconST STD10N60M2
In-Stock: 361
361 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.7324$ 0.73
10+$ 0.5892$ 5.89
30+$ 0.5176$ 15.53
100+$ 0.446$ 44.60
500+$ 0.4037$ 201.85
1,000+$ 0.3825$ 382.50
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage600V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)0.84pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)400pF
Gate Charge(Qg)13.5nC@10V
TypeN-Channel
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Introduction

AI Translation

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

Features

AI Translation
  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications