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ST STP110N7F6RoHS

Manufacturer
ST
MPN
STP110N7F6
LCSC Part #
C2761799
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 68V 110A TO-220
Datasheetpdf iconST STP110N7F6
In-Stock: 100
100 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.5627$ 0.56
10+$ 0.4651$ 4.65
50+$ 0.3789$ 18.95
100+$ 0.3301$ 33.01
500+$ 0.3009$ 150.45
1,000+$ 0.2862$ 286.20
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage68V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation176W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.85nF
Gate Charge(Qg)100nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This device is an N-channel power MOSFET developed using STripFET™ F6 technology featuring a novel trench gate structure. The resulting power MOSFET exhibits extremely low R<sub>DS(ON)</sub> across all packages.

Features

AI Translation
  • Ultra-low on-resistance
  • Ultra-low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

AI Translation
  • Switching applications