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Hangzhou Silan Microelectronics SGT50T65FD1PNRoHS

Manufacturer
Hangzhou Silan MicroelectronicsAsian Brands
MPN
SGT50T65FD1PN
LCSC Part #
C2761787
Packaging
TO-3P-3
Customer #
Key Attributes
235W 100A 650V FS (Field Stop) TO-3P-3 Single IGBTs RoHS
Datasheetpdf iconHangzhou Silan Microelectronics SGT50T65FD1PN

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerHangzhou Silan Microelectronics
PackagingTO-3P-3
Pd - Power Dissipation235W
Td(off)130ns
Operating Temperature-55℃~+150℃
Td(on)45ns
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)42pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V
Vce Saturation(VCE(sat))2V@50A,15V
Reverse Recovery Time(trr)33ns
Switching Energy(Eoff)3.8mJ
Turn-On Energy (Eon)1mJ
Input Capacitance(Cies)4.5nF
Output Capacitance(Coes)100pF
Gate Charge(Qg)46nC@15V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece
In-Stock: 5,245
5,245 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.3612$ 1.36
10+$ 1.1506$ 11.51
30+$ 0.9237$ 27.71
90+$ 0.7925$ 71.33
510+$ 0.7357$ 375.21
1,200+$ 0.7098$ 851.76
Standard Packaging30/Full Tube
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