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onsemi NDT3055L
| Manufacturer | |
| MPN | NDT3055L |
| LCSC Part # | C274612 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 4A SOT-223 |
| Datasheet |  onsemi NDT3055L |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 110pF | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -65℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 120mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 345pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 110pF | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -65℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 120mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 345pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
Introduction
These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients
Features
- 4 A, 60 V. RDS(ON)=0.100 Ω @ VGS=10 V, RDS(ON)=0.120 Ω @ VGS=4.5 V.
- Low drive requirements allowing operation directly from logic drivers. VGS(TH)<2 V.
- High density cell design for extremely low RDS(ON).
- High power and current handling capability in a widely used surface mount package.
Applications
- DC motor control
- DC/DC conversion
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6309 | $ 0.63 |
| 10+ | $ 0.5044 | $ 5.04 |
| 30+ | $ 0.4412 | $ 13.24 |
| 100+ | $ 0.3795 | $ 37.95 |
| 500+ | $ 0.3422 | $ 171.10 |
| 1,000+ | $ 0.3228 | $ 322.80 |
Standard Packaging4000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 110pF | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -65℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 120mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 345pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 110pF | |
| Current - Continuous Drain(Id) | 4A | |
| Operating Temperature - | -65℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 120mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 345pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
Introduction
These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients
Features
- 4 A, 60 V. RDS(ON)=0.100 Ω @ VGS=10 V, RDS(ON)=0.120 Ω @ VGS=4.5 V.
- Low drive requirements allowing operation directly from logic drivers. VGS(TH)<2 V.
- High density cell design for extremely low RDS(ON).
- High power and current handling capability in a widely used surface mount package.
Applications
- DC motor control
- DC/DC conversion
C274612 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |