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onsemi NDC7003PRoHS

Manufacturer
onsemi
MPN
NDC7003P
LCSC Part #
C274603
Packaging
TSOT-23-6
Customer #
Key Attributes
340mA 7Ω@4.5V 960mW 3.5V 1 P-Channel TSOT-23-6 FET, MOSFET Arrays RoHS
Datasheetpdf icononsemi NDC7003P
In-Stock: 31
31 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.7149$ 0.71
10+$ 0.5947$ 5.95
30+$ 0.5427$ 16.28
100+$ 0.4777$ 47.77
500+$ 0.4371$ 218.55
1,000+$ 0.4192$ 419.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingTSOT-23-6
Current - Continuous Drain(Id)340mA
RDS(on)7Ω@4.5V
Pd - Power Dissipation960mW
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage60V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)6pF
Number1 P-Channel
Input Capacitance(Ciss)66pF
Gate Charge(Qg)2.2nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)13pF
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Introduction

AI Translation

These dual P-channel enhancement-mode power MOSFETs are fabricated using a proprietary trench technology. This high-density process is designed to minimize on-resistance, delivering robust, reliable performance and fast switching characteristics. The device is particularly suited for low-voltage applications requiring low-current high-side switching.

Features

AI Translation
  • RDS(ON) = 7 Ω at VGS = -4.5 V
  • 0.34A, -60 V; RDS(ON) = 5 Ω at VGS = -10 V
  • Low gate charge
  • Fast switching speed
  • Low RDS(ON) via high-performance trench technology
  • SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thickness)