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Infineon IPTG017N12NM6ATMA1 product image
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Infineon IPTG017N12NM6ATMA1RoHS

Manufacturer
Infineon
MPN
IPTG017N12NM6ATMA1
LCSC Part #
C27391716
Packaging
PG-HSOG-8-1
Customer #
Key Attributes
MOSFET N-CH 120V 331A PG-HSOG-8-1
Datasheetpdf iconInfineon IPTG017N12NM6ATMA1
In-Stock: 7
7 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 4.5669$ 4.57
10+$ 4.4676$ 44.68
30+$ 4.4008$ 132.02
100+$ 4.334$ 433.40
Standard Packaging1800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingPG-HSOG-8-1
Drain to Source Voltage120V
Output Capacitance(Coss)2.4nF
Current - Continuous Drain(Id)331A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.1V
Pd - Power Dissipation395W
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-channel
Input Capacitance(Ciss)8.1nF
Gate Charge(Qg)113nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1800
Sales UnitPiece

Features

AI Translation
  • N-channel, normally-on
  • Ultra-low on-resistance RDS(on)
  • Excellent gate charge × RDS(on) product (figure of merit FOM)
  • Ultra-low reverse recovery charge (Qrr)
  • High avalanche energy rating
  • Operating temperature up to 175°C
  • Optimized for high-frequency switching and synchronous rectification
  • Lead-free pin plating; RoHS compliant
  • Halogen-free per IEC61249-2-21
  • MSL 1 rated per J-STD-020