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Infineon AIMZHN120R080M1TXKSA1RoHS

Manufacturer
Infineon
MPN
AIMZHN120R080M1TXKSA1
LCSC Part #
C27274450
Packaging
TO-247-4
Customer #
Key Attributes
SICFET 1.2kV 31A TO-247-4
Datasheetpdf iconInfineon AIMZHN120R080M1TXKSA1
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QtyUnit Price(Reference Only)Total Amount
1+$ 7.3285$ 7.33
10+$ 7.1403$ 71.40
30+$ 7.0164$ 210.49
100+$ 6.891$ 689.10
Standard Packaging240/Full Bag
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247-4
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)31A
Output Capacitance(Coss)35pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.1V
Pd - Power Dissipation169W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)80mΩ
Number1 N-channel
Input Capacitance(Ciss)671pF
Gate Charge(Qg)24nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging240
Sales UnitPiece

Features

AI Translation
  • VDSS = 1200 V at TVj = -55…175℃
  • IDDC = 31 A at TC = 25℃
  • RDS(on) = 80 mΩ at VGS = 20 V, TVj = 25℃
  • New performance-optimized chip technology (Gen1p) with improved RDS(on)
  • A FOM
  • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
  • Best in class switching energy for lower switching losses and reduced cooling efforts
  • Lowest device capacitances for higher switching speeds and higher power density
  • A combination of low CRSS/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving
  • Reduced total gate charge QGtot for lower driving power and losses
  • XT die attach technology for best in class thermal performance
  • Sense pin for optimized switching performance
  • Suitable for HV creepage requirements

Applications

AI Translation
  • On-board charger
  • DC/DC converter
  • Auxiliary drives