Infineon IRF7103TRPBF
| Manufacturer | |
| MPN | IRF7103TRPBF |
| LCSC Part # | C27080 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 50V 3A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 3A | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 200mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 50V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 290pF | |
| Gate Charge(Qg) | 30nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Features
- Adavanced Process Technology
- Ultra Low On-Resistance
- Dual N-Channel MOSFET
- Surface Mount
- Available in Tape & Reel
- Dynamic dv/dt Rating
- Fast Switching
- Lead-Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5746 | $ 0.57 |
| 10+ | $ 0.4688 | $ 4.69 |
| 30+ | $ 0.4151 | $ 12.45 |
| 100+ | $ 0.363 | $ 36.30 |
| 500+ | $ 0.3321 | $ 166.05 |
| 1,000+ | $ 0.3158 | $ 315.80 |
Standard Packaging4000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 3A | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 200mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 50V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 290pF | |
| Gate Charge(Qg) | 30nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Features
- Adavanced Process Technology
- Ultra Low On-Resistance
- Dual N-Channel MOSFET
- Surface Mount
- Available in Tape & Reel
- Dynamic dv/dt Rating
- Fast Switching
- Lead-Free
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |


