LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
Infineon IRFP4227PBF product image
  • IRFP4227PBF thumbnail 1
  • IRFP4227PBF thumbnail 2
  • IRFP4227PBF thumbnail 3
  • Pinout
  • Footprint
Images for reference only

Infineon IRFP4227PBFRoHS

Manufacturer
Infineon
MPN
IRFP4227PBF
LCSC Part #
C2690
Packaging
TO-247AC
Customer #
Key Attributes
MOSFET N-CH 200V 65A TO-247AC
Datasheetpdf iconInfineon IRFP4227PBF
In-Stock: 14,927
14,927 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.6753$ 1.68
10+$ 1.4153$ 14.15
25+$ 1.2512$ 31.28
100+$ 1.0838$ 108.38
500+$ 1.0091$ 504.55
1,000+$ 0.975$ 975.00
Standard Packaging25/Full Tube
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247AC
Drain to Source Voltage200V
Current - Continuous Drain(Id)65A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
Gate Charge(Qg)98nC@10V
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging25
Sales UnitPiece

Introduction

AI Translation

This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Features

AI Translation
  • Advanced Process Technology
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low EpULsE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low QG for Fast Response
  • High Repetitive Peak Current Capability for Reliable Operation
  • Short Fall & Rise Times for Fast Switching
  • 175°C Operating Junction Temperature for Improved Ruggedness
  • Repetitive Avalanche Capability for Robustness and Reliability