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ST STB34NM60NDRoHS

Manufacturer
ST
MPN
STB34NM60ND
LCSC Part #
C2688643
Packaging
TO-263
Customer #
Key Attributes
MOSFET N-CH 600V 29A TO-263
Datasheetpdf iconST STB34NM60ND
In-Stock: 945
945 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 3.2542$ 3.25
10+$ 3.0819$ 30.82
30+$ 2.9794$ 89.38
100+$ 2.8753$ 287.53
500+$ 2.8282$ 1414.10
1,000+$ 2.8054$ 2805.40
Standard Packaging1000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-263
Drain to Source Voltage600V
Current - Continuous Drain(Id)29A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation190W
RDS(on)110mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.785nF
Gate Charge(Qg)80.4nC@10V
TypeN-Channel
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Introduction

AI Translation

These devices are N-channel FDmesh™ V power MOSFETs manufactured using STMicroelectronics (ST) MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting products feature extremely low on-resistance, unmatched among silicon-based power MOSFETs, and deliver superior switching performance thanks to their inherent fast-recovery body diode.

Features

AI Translation
  • Best-in-class R DS(on) among fast recovery diode devices in TO-220 package
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capability

Applications

AI Translation
  • Switching applications