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ST STP11NM60RoHS

Manufacturer
ST
MPN
STP11NM60
LCSC Part #
C2688581
Packaging
TO-220
Customer #
Key Attributes
600V 11A 5V 160W 450mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS
Datasheetpdf iconST STP11NM60
In-Stock: 144
144 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.7545$ 1.75
10+$ 1.4697$ 14.70
30+$ 1.2923$ 38.77
100+$ 1.11$ 111.00
500+$ 1.027$ 513.50
1,000+$ 0.9912$ 991.20
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage600V
Current - Continuous Drain(Id)11A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
Gate Charge(Qg)30nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are N-channel power MOSFETs developed using second-generation MDmesh™ technology. These innovative power MOSFETs combine a vertical structure with a strip layout to achieve extremely low on-resistance and gate charge. As a result, they are well-suited for the most demanding high-efficiency converters.

Features

AI Translation
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications

AI Translation
  • Switching applications