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ST STP12NM50RoHS

Manufacturer
ST
MPN
STP12NM50
LCSC Part #
C2688579
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 500V 12A TO-220
Datasheetpdf iconST STP12NM50
In-Stock: 921
921 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.3764$ 2.38
10+$ 2.039$ 20.39
30+$ 1.8281$ 54.84
100+$ 1.6124$ 161.24
500+$ 1.5151$ 757.55
1,000+$ 1.4729$ 1472.90
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage500V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)12A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)350mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
Gate Charge(Qg)28nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These N-channel Power MOSFETs are developed using revolutionary MDmesh technology, which associates the multiple drain process with the PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Features

AI Translation
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications

AI Translation
  • Switching applications