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ST STQ1HNK60R-APRoHS

Manufacturer
ST
MPN
STQ1HNK60R-AP
LCSC Part #
C2688541
Packaging
TO-92
Customer #
Key Attributes
MOSFET N-CH 600V 0.4A TO-92
Datasheetpdf iconST STQ1HNK60R-AP
In-Stock: 52
52 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6538$ 0.65
10+$ 0.525$ 5.25
30+$ 0.4598$ 13.79
100+$ 0.3962$ 39.62
500+$ 0.3571$ 178.55
1,000+$ 0.3375$ 337.50
Standard Packaging2000/Full Box
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-92
Drain to Source Voltage600V
Current - Continuous Drain(Id)400mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)3.8pF
RDS(on)8.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)156pF
Gate Charge(Qg)10nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized

Applications

AI Translation
  • Switching applications